Ease of Paralleling. Maximum Ratings. TOAB. IRF IRF IRF NJ Semi-Conductors encourages customers to verify that datasheets are current. IRF A, V, Ohm, N-channel Power MOSFET. This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power. Part, IRF Category, Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel. Description, A, V, Ohm, N-channel.
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IRF MOSFET Datasheet pdf – Equivalent. Cross Reference Search
Customers using or selling Vishay products not expressly indicated for use in such applications do so irc710 their own risk. Case Temperature td off tf tr Fig.
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Such statements are not binding statements about the suitability of products for a particular application. The low thermal resistance and low package cost of the TOAB contribute to its wide acceptance throughout the industry.
B, Mar This datasheet is subject to change without notice. Product names and markings noted herein may be trademarks of their respective owners. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations.
The TOAB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. Repetitive rating; pulse width limited by maximum junction temperature see fig. B, Mar 7 8 9 10 Fig.
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