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isc website: 1 isc Silicon NPN Power Transistor. BUAX. DESCRIPTION. ·Collector-Emitter Sustaining Voltage VCEO(SUS)= V (Min ). BUAX BUAX; Silicon Diffused Power Transistor;; Package: SOT ( TOP-3D). Details, datasheet, quote on part number: BUAX. BUAX datasheet, BUAX circuit, BUAX data sheet: PHILIPS – Silicon Diffused Power Transistor,alldatasheet, datasheet, Datasheet search site for.

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Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

Typical collector storage and fall time. Test circuit for VCEOsust. Application information Where application information is given, it is advisory and does not form part of the specification.

SOT; Datsheet seating plane is electrically isolated from all terminals.

September 2 Rev 2. September 7 Rev 2. New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz. Product specification This data sheet contains final product specifications.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. No liability will be accepted by the publisher for any consequence of its use.

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BUAX – PHILIPS – IC Chips – Kynix Semiconductor

September 1 Rev 2. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. Typical collector-emitter saturation voltage. Refer to mounting instructions for F-pack envelopes.

Cfb -VBB t Fig. How long will receive a response. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Stress above one or more of the limiting values may cause permanent damage to the device. New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers.

BUAX NTE Equivalent NTE NPN horizontal outpu – Wholesale Electronics

Collector to emitter voltage Collector to emitter voltage open base Collector current Datasheer Collector current peak value Base current DC Base current peak value Reverse base current Reverse base current peak value1 Total power dissipation Storage temperature Junction temperature.

Switching times waveforms 32 kHz. September 3 Rev 2. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.

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(PDF) BU2520AX Datasheet download

UNIT – – 1. Want to post a buying lead? September 6 Rev 2. Mounted with heatsink compound.

Switching times test circuit. Switching times waveforms 16 kHz.

Typical DC current gain. Oscilloscope display for VCEOsust. Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.

Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

BU2520AX – Silicon Diffused Power Transistor

Exposure to limiting values for extended periods may affect device reliability. Forward bias safe operating area. Typical base-emitter saturation voltage. September 8 Rev 2. Click here to Download.